Fully-depleted SOI CMOS circuits & technology for ultralow-power applications

Fully-depleted SOI CMOS circuits & technology for ultralow-power applications

Auteur(s) : SAKURAI Takayasu
Date de parution: 01-2006
Langue : ANGLAIS
420p. Hardback
Etat : Disponible chez l'éditeur (délai de livraison : 10 jours)

Résumé
The most important issue confronting CMOS technology is the power explosion of chips arising from the scaling law. Fully-depleted (FD) SOI technology provides a promising low-power solution to chip implementation. Ultralow-power VLSIs, which have a power consumption of less than 10 mW, will be key components of terminals in the coming ubiquitous-IT society. This book addresses the problem of reducing the supply voltage of conventional circuits for ultralow-power operation and explains power-efficient MTCMOS circuit design for FD-SOI devices at a supply voltage of 0.5 V. The topics include the minimum required knowledge of the fabrication of SOI substrates, FD-SOI devices and the latest developments in device and process technologies, and ultralow-voltage circuits, such as digital circuits, analog/RF circuits, and DC-DC converters. Each ultra-low-power technique related to devices and circuits is fully explained using figures to help understanding. The authors present three examples of ultralow-power systems based on FD-SOI technology, providing every reader with practical knowledge on the technology and the circuits.

Sommaire
Introduction. Why SOI? What is SOI? -Structure. Advantages of SOI. History of the Development of SOI Technology. Partially-Depleted (PD) and Fully-Depleted (FD) SOI . MOSFETs, and Future MOSFETs. FD-SOI Device and Process Technologies. FD-SOI Devices. Theoretical Basis of FD-SOI Device Operation: DC Operation. FD-SOI CMOS Process Technology. Ultralow-Power Circuit Design with FD-SOI Devices. Ultralow-Power Short-Range Wireless Systems. Key Design Factor for Ultralow-Power LSIs. Ultralow-Voltage Digital-Circuit Design. Robustness of Ultralow-Voltage Operation. Prospects and Issues in Low-Voltage Analog Circuits. Technology Scaling, Analog Performance, and Performance Trend for Electrical Systems. Low-Voltage Analog Circuit. Fully-Depleted SOI Devices for Ultralow-Power Analog. Circuits. Future Direction of RF and Mixed Signal Systems. 0.5-V MTCMOS/SOI Digital Circuits. MTCMOS/SOI Circuits. Adder. Multiplier. Memory. Frequency Divider. 0.5-1V MTCMOS/SOI Analog/RF Circuits. RF Building Blocks. AD and DA Converters. DC-DC Converter. I/O and ESD-Protection Circuitry for Ultralow-Power LSIs. SPICE Model for SOI MOSFETs. SPICE Model for SOI MOSFETs. Parameter Extraction. Example of SOI MOSFET Simulation. Applications. 1-V Bluetooth RF Transceiver and Receiver. Solar-Powered, Radio-Controlled Watch. Batteryless Short-Range Wireless System. Prospects for FD-SOI Technology. Evolution of Nanoscale FD-SOI Devices. Device and Substrate Technologies for Ultrathin-Body. SOI MOSFETs. Power-Aware Electronics and Role of FD-SOI Technology.

Thèmes :

* Electricite - electronique - telecoms / Electronique / Circuits électriques électroniques, circuits hyper-fréquences, micro-électronique